Quek, Z. J., Lim, Y., Li, M., Lin, H., & Hong, Y. (2023, July 23). Patterning of Sc0.3Al0.7N Film for Piezoelectric MEMS Devices. 2023 IEEE International Symposium on Applications of Ferroelectrics (ISAF). https://doi.org/10.1109/isaf53668.2023.10265557
Abstract:
Piezoelectric coefficient in Sc x Al 1-x N was reported to increase as scandium-doping x increases up to 43%. However, the patterning of Sc 0.3 Al 0.7 N film for the fabrication of piezoelectric micro-electromechanical systems (MEMS) devices poses challenges such as low etch rate, uncontrollable sidewall profile, micro-trenching, and significant bottom molybdenum (Mo) electrode loss. In this work, engineering of the sidewall profile by etch byproduct redeposition through plasma etch parameters and development of Sc x Al 1-x N etch with a soft landing on the bottom Mo electrode was investigated. Post-etch analysis on the exposed Sc 0.3 Al 0.7 N sidewall was also performed to validate any presence of conducting residues and surface oxidation.
License type:
Publisher Copyright
Funding Info:
This research / project is supported by the A*STAR - Ferroelectric Aluminum Scandium Nitride (Al1-xScxN) Thin Films and Devices for mm-Wave and Edge Computing (WP06)
Grant Reference no. : A20G9b0135