Performance Improvement via Stack Engineering and Post-bake Retention State Stabilization in Fully CMOS Compatible HfO2-based RRAM

Performance Improvement via Stack Engineering and Post-bake Retention State Stabilization in Fully CMOS Compatible HfO2-based RRAM

2023 IEEE International Symposium on Applications of Ferroelectrics (ISAF)

10.1109/ISAF53668.2023.10265654

http://dx.doi.org/10.1109/isaf53668.2023.10265654

Subhranu Samanta, Chen Zhixian, Hock Koon Lee, Weijie Wang, Song Wendong, Yao Zhu, Li Chen, Chen Liu

29 September 2023

Samanta, S., Zhixian, C., Lee, H. K., Wang, W., Wendong, S., Zhu, Y., Chen, L., & Liu, C. (2023, July 23). Performance Improvement via Stack Engineering and Post-bake Retention State Stabilization in Fully CMOS Compatible HfO2-based RRAM. 2023 IEEE International Symposium on Applications of Ferroelectrics (ISAF). https://doi.org/10.1109/isaf53668.2023.10265654

In this paper, we report forming-free bipolar resistive switching characteristics via stack engineering in a fully complementary metal-oxide-semiconductor (CMOS) compatible HfO 2 -based resistive random-access memory (RRAM) device. We have investigated the impact of flipping the stack on resistive switching performance. The optimized flip stack (TiN/TiO 2 /HfO 2 /Ti/TiN) exhibits program/erase (P/E) endurance of 10 6 cycles at 100 ns SET/RESET pulse width having minimum memory window (MW min ) of >10, while memory window closes permanently after 5 × 10 2 P/E cycles in the control stack (TiN/Ti/HfO 2 /TiO 2 /TiN). Furthermore, a significant improvement in retention state variability of the flip stack at the post-baking condition (24 hours at 150 ℃) is obtained by employing a new pre-conditioning scheme. This TiN/TiO 2 /HfO 2 /Ti/TiN RRAM device has immense potential for future non-volatile memory (NVM) application.

Publisher Copyright

This research / project is supported by the A*STAR - Next Generation Resistive Random Access Memory (RRAM) Platform
Grant Reference no. : I1801E0017

© 2023 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

https://oar.a-star.edu.sg/communities-collections/articles/20287

2375-0448

Institute of Microelectronics