DC-Bias Effects on Sputtered PZT pMUTs with High Transmit and Receive Sensitivities in Immersion for Imaging applications

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DC-Bias Effects on Sputtered PZT pMUTs with High Transmit and Receive Sensitivities in Immersion for Imaging applications
Please use this identifier to cite or link to this item: https://oar.a-star.edu.sg/communities-collections/articles/20275
Title:
DC-Bias Effects on Sputtered PZT pMUTs with High Transmit and Receive Sensitivities in Immersion for Imaging applications
Journal Title:
2023 IEEE International Ultrasonics Symposium (IUS)
DOI:
10.1109/IUS51837.2023.10307325
Publication URL:
http://dx.doi.org/10.1109/ius51837.2023.10307325
Authors:
Mantalena Sarafianou, David Sze Wai Choong, Duan Jian Goh, Jihang Liu, Srinivas Merugu, Qing Xin Zhang, Peter H. K. Chang, Domenico Giusti, Laura Castoldi, Filippo D’Ercoli, Riccardo Tacchini, Alberto Leotti, Dao Hao Sim, Alessandro Stuart Savoia, Joshua En-Yuan Lee
Keywords:
Publication Date:
07 November 2023
Citation:
Sarafianou, M., Wai Choong, D. S., Jian Goh, D., Liu, J., Merugu, S., Zhang, Q. X., Chang, P. H. K., Giusti, D., Castoldi, L., D’Ercoli, F., Tacchini, R., Leotti, A., Sim, D. H., Stuart Savoia, A., & Lee, J. E.-Y. (2023, September 3). DC-Bias Effects on Sputtered PZT pMUTs with High Transmit and Receive Sensitivities in Immersion for Imaging applications. 2023 IEEE International Ultrasonics Symposium (IUS). https://doi.org/10.1109/ius51837.2023.10307325
Abstract:
This work reports a 7.5MHz sputtered Lead Zirconate Titanate (PZT) piezoelectric micromachined ultrasonic transducer (pMUT) array that demonstrates both strong transmit (9.3kPa/V/mm 2 ) and receive performance (6.5V/MPa) characterized in immersion without signal amplification and within a 5mm 2 aperture. This paper presents yet higher RX sensitivities for the proposed device even with a direct connection to an oscilloscope. We elucidate the effect of DC bias on the acoustic transmit (TX) and receive (RX) characteristics of PZT pMUTs, and how these could be tuned to increase the performance of the pMUTs. The device was fabricated at wafer-scale in our 8-inch line, which is capable of physical vapor deposition (PVD) of high quality PZT.
License type:
Publisher Copyright
Funding Info:
This research / project is supported by the A*STAR - IAF-ICP - Piezo Specialty Lab-in-a-Fab (LIF 1.0)
Grant Reference no. : I1901E0050
Description:
© 2023 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
URI:
https://oar.a-star.edu.sg/communities-collections/articles/20275
ISSN:
1948-5727
Collections:
Institute of Microelectronics
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