Kim, J., Ju, X., Ang, K.-W., & Chi, D. (2023). Van der Waals Layer Transfer of 2D Materials for Monolithic 3D Electronic System Integration: Review and Outlook. ACS Nano, 17(3), 1831–1844. https://doi.org/10.1021/acsnano.2c10737
Abstract:
Two-dimensional materials (2DMs) have attracted a great deal of interest due to their immense potential for scientific breakthroughs and technological innovations. While some of 2D transition metal dichalcogenides (TMDC) such as MoS2 and WS2 are considered as the ultimate channel materials in unltrascaled transistors as replacement of Si, there have been also increasing interest in the monolithic 3D integration of 2DMs on Si CMOS platform or in flexible electronics as back-end-of-line transistors, memory devices/selectors, and sensors, taking advantage of unique properties of 2DMs such as high current driving capability with low leakage current, non-volatile switching characteristics, large surface-to-volume ratio, and tunable bandgap. However, the realization of both these scenarios critically depends on the development of manufacturing-viable high yield 2DM layers transfer from the growth substrate to the Si, since the growth of high quality 2DM layers often requires high temperature growth process on template substrates. Motivated by this, extensive efforts have been made by 2DM research community to develop various 2DM layer transfer methods, leveraging on the van der Waals transfer capability of the layered-structure 2DMs. These efforts have led to a number of successful demonstrations of wafer scale 2D TMDC layer transfer, while 2DM-enabled template growth/transfer of some functional bulk materials such as III-V, Ge, AlN has also been demonstrated. This review surveys and compares different 2DMs transfer methods developed recently, with focus on large area 2D TMDCs film transfer along with an introduction of 2DM template assisted van der Waals growth/transfer of non-2D thin films. We will also briefly present the outlook of our envisioned multi-functionalities in 3D integrated electronic systems enabled by the monolithic 3D integration of 2DMs and III-V via van der Waals transfer and discuss possible technology options for overcoming remaining challenges.
License type:
Publisher Copyright
Funding Info:
This research / project is supported by the National Research Foundation - Competitive Research Grant
Grant Reference no. : NRF-CRP24-2020-0002