A 2.5D Heterogeneous Integration Demonstration for High Performance RF Application using High-Resistivity Through Si Interposer (TSI)

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A 2.5D Heterogeneous Integration Demonstration for High Performance RF Application using High-Resistivity Through Si Interposer (TSI)
Title:
A 2.5D Heterogeneous Integration Demonstration for High Performance RF Application using High-Resistivity Through Si Interposer (TSI)
Journal Title:
2021 IEEE 23rd Electronics Packaging Technology Conference (EPTC)
Keywords:
Publication Date:
05 January 2022
Citation:
Loh, W. L., Guan, L. T., & Chui, K.-J. (2021). A 2.5D Heterogeneous Integration Demonstration for High Performance RF Application using High-Resistivity Through Si Interposer (TSI). 2021 IEEE 23rd Electronics Packaging Technology Conference (EPTC). https://doi.org/10.1109/eptc53413.2021.9663901
Abstract:
In this paper, a 2.5D high-resistivity through-Si-interposer (TSI) is demonstrated to integrate multi-functional dies from different device technologies (such as GaN HEMT and Si/SiGe amplifiers) for high performance RF applications. Such integration schemes allow for compact, small form-factor design in airborne radar and communication.
License type:
Publisher Copyright
Funding Info:
This research is supported by Industry Funding.
Description:
© 2022 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
ISBN:
978-1-6654-1619-1
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