Low Cost Grounding Integration for Surface Ion Trap

Low Cost Grounding Integration for Surface Ion Trap

2021 IEEE 71st Electronic Components and Technology Conference (ECTC)

10.1109/ECTC32696.2021.00259

http://dx.doi.org/10.1109/ectc32696.2021.00259

Hongyu Li, Wen Wei Seit, Hwang Gilho, Peng Zhao, Jing. Tao, Chuan Seng Tan

10 August 2021

Li, H., Seit, W. W., Gilho, H., Zhao, P., Tao, Jing., & Tan, C. S. (2021). Low Cost Grounding Integration for Surface Ion Trap. 2021 IEEE 71st Electronic Components and Technology Conference (ECTC). https://doi.org/10.1109/ectc32696.2021.00259

Si substrate provide the integration platform for surface ion trap device fabrication. Grounding metal for the surface ion trap is necessary because of high RF voltage (> 100V) applied and lower RF loss required within functionality. High resistivity Si substrate with floating metal grounding and low-grade Si substrate with connected grounding metal were integrated with surface ion trap. Ion trap resonance curves were observed at 47.1 MHz frequency for ion trap devices with different grounding metal. The curves have similar resonant power.

Publisher Copyright

This research / project is supported by the A*STAR - Quantum Technology for Engineering
Grant Reference no. : A1685b0005

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https://oar.a-star.edu.sg/communities-collections/articles/18222

978-1-6654-3120-0

Institute of Microelectronics