Ouyang, B., Chao, D., Jia, G., Zhang, Z., Kan, E., Fan, H. J., Rawat, R. S. (2021). C-plasma derived precise volumetric buffering for high-rate and stable alloying-type energy storage. Nano Energy, 80, 105557. doi:10.1016/j.nanoen.2020.105557
Abstract:
The void introduction for high-energy alloying-type electrode has suffered a dilemma between insufficient void leading to structural collapse and excessive void causing low volumetrical utilization ratio. Herein, a novel tunable void structure of SnO2-void-hierarchically vertical graphene (SnO2□hVG) nanoarray has been designed via facile C-plasma technique, which facilitates simultaneous encapsulation of protective vertical graphene and moderate void formation. Benefiting from the tunable void and interconnected highly conductive graphene shells and backbones, our all-in-one framework delivers excellent structural integrity and superior Li+ storage capabilities due to the precise volume buffering without collapse of structure and extravagant void. As a result, an imposing capacity of 650 mA h g 1 at 2 A g 1 and negligible capability degradation after 1000 cycles can be achieved. This result opens a new opportunity in tunable void design to enhance the electrochemical performance of alloying-type electrode materials.
License type:
Attribution-NonCommercial-NoDerivatives 4.0 International (CC BY-NC-ND 4.0)
Funding Info:
This research / project is supported by the Nanjing University of Science and Technology - NSFC
Grant Reference no. : 51522206, 11774173, 11574151, 51790492
This research / project is supported by the China - Fundamental Research Funds for the Central Universities
Grant Reference no. : 30915011203, 30918011334
This research / project is supported by the National Institute of Education - NIE AcRF research
Grant Reference no. : RI 6/14 RSR, RS 6/18 RSR