A 12-16 GHz GaN-on-Si Power Amplifier with >38dBm Output Power and >28% PAE for Very Small Aperture Terminal Application in SatCom

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A 12-16 GHz GaN-on-Si Power Amplifier with >38dBm Output Power and >28% PAE for Very Small Aperture Terminal Application in SatCom
Please use this identifier to cite or link to this item: https://oar.a-star.edu.sg/communities-collections/articles/22023
Title:
A 12-16 GHz GaN-on-Si Power Amplifier with >38dBm Output Power and >28% PAE for Very Small Aperture Terminal Application in SatCom
Journal Title:
14th International Conference on Nitride Semiconductor
DOI:
NA
Publication URL:
https://onlinelibrary.wiley.com/doi/toc/10.1002/(ISSN)1862-6319.ICNS-14
Authors:
Robin Kalyan, Nur Aisyah Binte Kuyob, Hanlin Xie, Gao Yuan, Kumud Ranjan, M Kumarasamy Raja, Kevin Tshun Chuan Chai, Leung Kafai, Navab Singh
Keywords:
Publication Date:
16 November 2023
Citation:
NIL
Abstract:
License type:
Publisher Copyright
Funding Info:
This research / project is supported by the A*STAR - Electronics Science Productization Lab GAP
Grant Reference no. : I21AEAG004

This research / project is supported by the The Office for Space Technology & Industry - Space Technology Development Programme
Grant Reference no. : COY-15-STDP/220014, S22-02003-STDP, 199702110H
Description:
URI:
https://oar.a-star.edu.sg/communities-collections/articles/22023
ISSN:
NA
Collections:
Institute of Microelectronics
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