DC Bias Effects on Optimizing ScAlN Air-Coupled pMUT Performance Parameters

DC Bias Effects on Optimizing ScAlN Air-Coupled pMUT Performance Parameters

2023 IEEE SENSORS

10.1109/SENSORS56945.2023.10325160

http://dx.doi.org/10.1109/sensors56945.2023.10325160

D. S. W. Choong, D. J. Goh, J. Liu, M. Sarafianou, S. Merugu, Q. X. Zhang, P. Chang, A. Leotti, G. Koppisetti, N. Zakiyyan, H. Lin, C. Bhasetti, S. Ghosh, P. C. Ramegowda, D. S.-H. Chen, J. E.-Y. Lee, C. Prelini, D. Giusti, A. Savoia, Yul. K

28 November 2023

Choong, D. S. W., Goh, D. J., Liu, J., Sarafianou, M., Merugu, S., Zhang, Q. X., Chang, P., Leotti, A., Koppisetti, G., Zakiyyan, N., Lin, H., Bhasetti, C., Ghosh, S., Ramegowda, P. C., Chen, D. S.-H., Lee, J. E.-Y., Prelini, C., Giusti, D., Savoia, A., & K, Yul. (2023). DC Bias Effects on Optimizing ScAlN Air-Coupled pMUT Performance Parameters. 2023 IEEE SENSORS, 1–4. https://doi.org/10.1109/sensors56945.2023.10325160

In this work, we demonstrate that the performance of ScAlN pMUTs can be enhanced by adjusting DC bias voltages. DC biases up to 80 V on ScAlN pMUTs contribute to film stress alleviation and enhance pMUT performance. Laser Doppler Vibrometry characterization was performed to evaluate an improvement in displacement transfer according to the DC bias, as well as to investigate the ferroelectric effect of 15% scandium-doped AlN film. As a result, both transmission sensitivity and receive sensitivity are improved by 11% and 50%, respectively, at 80V bias compared to 0V. Additionally, a 55% enlargement in the -3dB bandwidth (BW) has been achieved.

Publisher Copyright

This research / project is supported by the Agency for Science, Technology and Research - Piezo Specialty Lab-in-a-Fab (LIF 1.0)
Grant Reference no. : I1901E0050

This research / project is supported by the Agency for Science, Technology and Research - Nanosystems at the Edge
Grant Reference no. : A18A4b0055

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https://oar.a-star.edu.sg/communities-collections/articles/21114

1558-1748

Institute of Microelectronics