10um x 100um TSV was prepared by deep reactive ion etching process. Barrier and seed layer were
deposited by physical vapor deposition process and prior to Cu electroplating, Ni was electroplated on seed layer. Cu electroplating was optimized for solid TSV filling. To remove excessive Cu on field area, chemical mechanical polishing process is used in conventional TSV fabrication process. In this study, new excessive Cu removal process was developed. Electroplated Cu and Ni had poor adhesion and this characteristic was applied to remove excessive Cu from Ni surface.
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