A high performance monolithically integrated WDM receiver is fabricated on the SOI platform, with key components comprising a 1 x 32 Si-based AWG and an array of high speed waveguided Ge-on-Si photodetectors. The optical channel spacing is 200 GHz. This configuration was used to demonstrate 32-channel operation in the L-band, where it is particularly challenging for silicon photonics due to the low absorption coefficient of Ge at L-band wavelengths. Each channel is capable of operating at a data rate of at least 10 Gbps, resulting in an aggregate data rate of 320 Gbps. At a BER of 1 × 10−11, the WDM receiver showed an optical input sensitivity between −16 dBm and −19 dBm.
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