| Publication date | Communities | Collections | Article title | Author(s) | Journal/Conference |
|---|---|---|---|---|---|
| 23 Oct 2024 | SERC | Institute of Microelectronics | A Hybrid GaN HEMT Model Merging Artificial Neural Networks and ASM-HEMT for Parameter Precision and Scalability | Zhongzhiguang Lu, Hanchao Li, Hanlin Xie, Yihao Zhuang, Wang Wensong, Ng Geok Ing, Yuanjin Zheng | IEEE Transactions on Electron Devices |