Monolithic Integration of ScAlN Modulators on Silicon‐On‐Insulator Platform

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Monolithic Integration of ScAlN Modulators on Silicon‐On‐Insulator Platform
Title:
Monolithic Integration of ScAlN Modulators on Silicon‐On‐Insulator Platform
Journal Title:
Laser & Photonics Reviews
Keywords:
Publication Date:
24 December 2025
Citation:
Wang, S., Li, B., Zhou, L., Leong, V., Li, N., Luo, X., Zhu, D. (2025). Monolithic Integration of ScAlN Modulators on Silicon‐On‐Insulator Platform. Laser & Photonics Reviews, 20(9). Portico. https://doi.org/10.1002/lpor.202502672
Abstract:
ABSTRACT Monolithic integration of functional materials with the conventional silicon‐on‐insulator (SOI) platform is a key strategy for expanding the applications of silicon photonics. Among various emerging materials, ferroelectric scandium‐doped aluminum nitride (ScAlN) has gained significant attention because of its second‐order optical nonlinearity, electro‐optic (EO) property, CMOS fabrication compatibility, and flexible material control via Sc doping concentration. However, achieving high‐performance and scalable devices through monolithic integration requires a system architecture that leverages both the maturity of silicon processing and the favorable material properties of ScAlN. Here, we demonstrate a 200 mm wafer‐scale monolithic integration of Sc0.1Al0.9N EO modulator on the SOI platform with a top‐down electrode design enabling a large electric field, which directly accesses the diagonal EO component (r33). A multilayer electrode configuration is employed to enhance the RF‐optical field overlap, yielding an enhanced modulation efficiency. Our results establish a versatile and robust testbed for early‐stage material research, enabling reliable evaluation and integration of emerging materials despite immature fabrication processes.
License type:
Attribution-NonCommercial 4.0 International (CC BY-NC 4.0)
Funding Info:
This research / project is supported by the A*STAR - NA
Grant Reference no. : C220415015

This research / project is supported by the A*STAR - NA
Grant Reference no. : M23M5a0069

This research / project is supported by the National Research Foundation - National Research Foundation Fellowship
Grant Reference no. : NRF-NRFF15-2023-0005

This research / project is supported by the National Research Foundation - Quantum Engineering Programme
Grant Reference no. : NRF2022-QEP2-01-P07
Description:
ISSN:
1863-8880
1863-8899