Lead frame vs. mold via

Lead frame vs. mold via

2023 IEEE 73rd Electronic Components and Technology Conference (ECTC)

10.1109/ECTC51909.2023.00156

http://dx.doi.org/10.1109/ectc51909.2023.00156

Rathin Mandal

03 August 2023

Mandal, R. (2023, May). Lead frame vs. mold via. 2023 IEEE 73rd Electronic Components and Technology Conference (ECTC). https://doi.org/10.1109/ectc51909.2023.00156

In this work mold-via package structural performance is compared with lead frame (LF) package by simulation and modeling. The volume percentage of copper content in the LF package is around 20% more as compared to package with mold-via. Coefficient of thermal expansion (CTE) of copper is 17.0 ppm/°C as compared to 7.0 ppm/°C for mold compound. The mold-via package wafer level warpage is 50°/ 0 lesser and component level warpage is marginally better compared to LF whereas component level stress in the copper via is significantly higher than LF however copper via stress is in safe limit for temperature range of -50 to 150°C. The mold stress for both kinds of packages is at the same level. Board level temperature cycle solder joint strain energy density (SED) accumulation in each cycle for mold-via package is 10% more than that of LF. This is due to LF package with more copper has better CTE matching with PCB CTE (around 16ppm/°C) and hence solder life for LF package is better than mold-via package.

Publisher Copyright

There was no specific funding for the research done

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https://oar.a-star.edu.sg/communities-collections/articles/20256

2377-5726

Institute of Microelectronics