Tong, S. W., & Ng, M.-F. (2022). (Digital Presentation) Scalable Growth of Transition Metal Dichalcogenides for Next-Generation Nanoelectronics. ECS Transactions, 109(7), 17–23. https://doi.org/10.1149/10907.0017ecst
Abstract:
Atomically-thin semiconducting transitional metal dichalcogenides (TMDCs) are promising channel materials for future ultra-scaled electronic devices due to their high electron mobility attained at sub-nanometer thickness. In particular, monolayer WS2 has shown the highest theoretical room temperature electron mobility among other semiconducting TMDCs as a result of its low effective mass. However, it is still challenging to grow large-area and strictly monolayer WS2 through the conventional chemical vapor deposition (CVD) due to the uncontrollable growth kinetics. In this work, we provide a modified CVD process to prepare the uniform and large-area monolayer TMDCs. Theoretical simulations were performed to understand the fundamental thermodynamically mechanism of the monolayer growth. The property-variation in TMDCs due to difference in electronic structure between different layers of TMDCs can be significantly reduced based on this new approach. This poses a reliable route for the scalable growth of monolayer TMDCs, which is essential for their reliable applications in nanoelectronic devices.
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Publisher Copyright
Funding Info:
This research / project is supported by the Agency for Science, Technology, and Research - Career Development Fund
Grant Reference no. : SC25/21-803212
Description:
This is the Accepted Manuscript version of an article accepted for publication in ECS Transactions. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1149/10907.0017ecst