Fu, W., John, M., Maddumapatabandi, T. D., Bussolotti, F., Yau, Y. S., Lin, M., & Johnson Goh, K. E. (2023). Toward Edge Engineering of Two-Dimensional Layered Transition-Metal Dichalcogenides by Chemical Vapor Deposition. ACS Nano, 17(17), 16348–16368. https://doi.org/10.1021/acsnano.3c04581
Abstract:
The manipulation of edge configurations and structures in atomically-thin transition metal dichalcogenides (TMDs) for versatile functionalization has attracted intensive interest in recent years. The chemical vapor deposition (CVD) approach has shown promise for TMD edge engineering of atomic edge configurations (1H, 1T or 1T′-zigzag or armchair edges) as well as diverse edge morphologies (1D nanoribbons, 2D dendrites, 3D spirals, etc.). These edge-rich TMD layers offer versatile candidates for probing the physical and chemical properties and exploring potential applications in electronics, optoelectronics, catalysis, sensing, and quantum technologies. In this Review, we present an overview of the current state-of-the-art in the manipulation of TMD atomic edges and edge-rich structures using CVD. We highlight the vast range of distinct properties associated with these edge configurations and structures and provide insights into the opportunities afforded by such edge-functionalized crystals. The objective of this Review is to motivate further research and development efforts to use CVD as a scalable approach to harness the benefits of such crystal-edge engineering.
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Funding Info:
This research / project is supported by the Agency for Science, Technology and Research - NA
Grant Reference no. : 21709
This research / project is supported by the Singapore National Research Foundation - Competitive Research Programme
Grant Reference no. : CRP21-2018-0001