A sub-terahertz broadband detector based on a GaN high electron mobility transistor with nano-antennas

A sub-terahertz broadband detector based on a GaN high electron mobility transistor with nano-antennas
Title:
A sub-terahertz broadband detector based on a GaN high electron mobility transistor with nano-antennas
Other Titles:
Applied Physics Express
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Publication Date:
29 November 2016
Citation:
Applied Physics Express, Volume 10, Number 1
Abstract:
We report a sub-terahertz (THz) detector based on a 0.25-µm-gate-length AlGaN/GaN high-electron-mobility transistor (HEMT) on a Si substrate with nanoantennas. The fabricated device shows excellent performance with a maximum responsivity (R v) of 15 kV/W and a minimal noise equivalent power (NEP) of 0.58 pW/Hz0.5 for 0.14 THz radiation at room temperature. We consider these excellent results as due to the design of asymmetric nanoantennas. From simulation, we show that indeed such nanoantennas can effectively enhance the local electric field induced by sub-THz radiation and thereby improve the detection response. The excellent results indicate that GaN HEMTs with nanoantennas are future competitive detectors for sub-THz and THz imaging applications.
License type:
http://creativecommons.org/licenses/by/4.0/
Funding Info:
Description:
ISSN:
1882-0778
1882-0786
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