Duan, N., Liow, T.-Y., Lim, A. E.-J., Ding, L. & Lo, G. Q. 310 GHz gain-bandwidth product Ge/Si avalanche photodetector for 1550 nm light detection. Optics Express 20, 11031–11036 (2012).
Abstract:
We report a normal incidence Ge/Si avalanche photodiode with separate-absorption-charge-multiplication (SACM) structure by selective epitaxial growth. By proper design of charge and multiplication layers and by optimizing the electric field distribution in the depletion region to eliminate germanium impact-ionization at high gain, a high responsivity of 12 A/W and a large gain-bandwidth product of 310 GHz have been achieved at 1550 nm.
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