Y. Qian, X. Wang and Y. Zhang, "Material Properties of Sc0.3Al0.7N Thin Films Derived from Electrical Measurements: A Study on Thickness and Temperature Dependence," 2025 IEEE International Ultrasonics Symposium (IUS), Utrecht, Netherlands, 2025, pp. 1-4, doi: 10.1109/IUS62464.2025.11201645.
Abstract:
We present the results of using an electrical method to extract intrinsic thin-film material properties with bulk acoustic wave resonators made from Sc0.3Al0.7N. This approach enables wafer-scale mapping of piezoelectric coefficients, elastic constants, and density. It can be applied to full-wafer material properties characterization, reveal thickness-dependent piezoelectric response and temperature coefficient. This methodology enables high-throughput wafer level characteristics and supports design optimization with wafer level material-property distributions rather than single-point values.
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Publisher Copyright
Funding Info:
This research / project is supported by the A*STAR - Industry Alignment Fund – Industry Collaboration Projects
Grant Reference no. : I2301E0027