Oxygen impurity effects on the piezoelectric response of wurtzite Al0.625Sc0.375N

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Oxygen impurity effects on the piezoelectric response of wurtzite Al0.625Sc0.375N
Title:
Oxygen impurity effects on the piezoelectric response of wurtzite Al0.625Sc0.375N
Journal Title:
Journal of Applied Physics
Publication Date:
15 July 2025
Citation:
Wang, X., Acharya, S., Wang, P., Zhao, Y.-M., Yao, K., & Shen, L. (2025). Oxygen impurity effects on the piezoelectric response of wurtzite Al0.625Sc0.375N. Journal of Applied Physics, 138(3). https://doi.org/10.1063/5.0264069
Abstract:
Al1−xScxN thin films have attracted remarkable attention in industrial applications, including micro-electro-mechanical systems and radio frequency acoustic filters due to their excellent piezoelectric properties and processing compatibility. However, a major challenge in developing high-performance Al1−xScxN thin films lies in controlling persistent oxygen impurities. Here, we systematically investigate the impact of oxygen impurities on the structural stability and piezoelectric properties of experimentally reported wurtzite Al0.625Sc0.375N using first-principles calculations. Seventeen types of defect configurations incorporating oxygen defects and cation vacancies have been developed, providing critical insights into their formation energies, effective piezoelectric coefficient (d33,f), dielectric constant (ɛ33), and electromechanical coupling coefficient (K332). Our findings demonstrate that moderate oxygen doping, particularly oxygen substitutional defects (ON), enhances the coefficient d33,f primarily attributed to a reduction in the elastic constant C33 and an increase in the piezoelectric tensor e33. In contrast, the interstitial oxygen (Oi) and cation vacancies (VAl/Sc) tend to decrease d33,f. Moreover, a low concentration pure ON at about 1.6% can notably enhance d33,f and K332 compared to oxygen-free w-Al0.625Sc0.375N and a higher concentration of ON defects increases ɛ33, further boosting the electric field response along the c-axis. These insights into defect engineering in Sc-doped AlN provide promising strategies for enhancing piezoelectric performance.
License type:
Publisher Copyright
Funding Info:
This research / project is supported by the A*STAR - Advanced Manufacturing and Engineering (AME) Programmatic Fund
Grant Reference no. : A20G9b0135
Description:
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Wang, X., Acharya, S., Wang, P., Zhao, Y.-M., Yao, K., & Shen, L. (2025). Oxygen impurity effects on the piezoelectric response of wurtzite Al0.625Sc0.375N. Journal of Applied Physics, 138(3). https://doi.org/10.1063/5.0264069 and may be found at https://doi.org/10.1063/5.0264069
ISSN:
0021-8979
1089-7550
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