Vertically Stacked Short Channel PtSe2/Ultrathin-Silicon Heterojunction for Fast-Speed UV Photodetection Application

Vertically Stacked Short Channel PtSe2/Ultrathin-Silicon Heterojunction for Fast-Speed UV Photodetection Application

Advanced Optical Materials

10.1002/adom.202402463

https://doi.org/10.1002/adom.202402463

Jiang Wang, Jiangxu Yang, Bo Yu, Zhicheng Wu, Mengting Jiang, Chun‐Yan Wu, Yang Wang, Feng‐Xia Liang, Xuezhi Ma, Li Li, Lin‐Bao Luo

Electrical and Electronic Engineering

14 November 2024

Wang, J., Yang, J., Yu, B., Wu, Z., Jiang, M., Wu, C., Wang, Y., Liang, F., Ma, X., Li, L., & Luo, L. (2024). Vertically Stacked Short Channel PtSe2/Ultrathin‐Silicon Heterojunction for Fast‐Speed UV Photodetection Application. Advanced Optical Materials, 13(5). Portico. https://doi.org/10.1002/adom.202402463

Superior ultraviolet photodetectors (UVPDs) with fast response speed and high responsivity are essential for UV communication, intelligent sensing, advanced manufacturing, and more. Various studies have demonstrated the excellent performance of traditional UVPDs based on wide bandgap semiconductors (WBSs). However, these devices often suffer from a relatively slow response speed due to the defect states within WBSs. In this work, a new short channel non‐WBS UVPD is developed using the vertically stacked short channel PtSe2/ultrathin‐Si UVPD. The heterojunction is stacked by the 200 nm thick Si flake that exfoliates from a Silicon‐on‐Insulator (SOI) wafer by wet etching and the wafer‐scale CVD ‐grown PtSe2 via the mature PDMS stamp transfer protocols. The absorption in the Si layer, which depends on the incident wavelength, shows a strong correlation with the device photocurrent response. Under 365 nm illumination, the vertical device exhibits a fast UV response speed up to 51.8/73.6 µs. This performance outperforms that of conventional lateral structures and many WBS‐based UVPDs, largely attributed to the extremely short transport distances of photogenerated carriers and the superior physical characteristics of Si. This study shows that ultrathin‐Si is a promising building block for fast speed UVPDs, which are vital for UV optoelectronic applications.

Publisher Copyright

There was no specific funding for the research done

This research / project is supported by the Agency for Science, Technology and Research - Manufacturing, Trade, and Connectivity Young Individual Research Grant
Grant Reference no. : M23M7c0129

This research / project is supported by the Agency for Science, Technology and Research - Career Development Fund - Seed Projects
Grant Reference no. : 222D800038

This is the peer reviewed version of the following article: Wang, J., Yang, J., Yu, B., Wu, Z., Jiang, M., Wu, C., Wang, Y., Liang, F., Ma, X., Li, L., & Luo, L. (2024). Vertically Stacked Short Channel PtSe2/Ultrathin‐Silicon Heterojunction for Fast‐Speed UV Photodetection Application. Advanced Optical Materials, 13(5). Portico, which has been published in final form at https://doi.org/10.1002/adom.202402463. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions. This article may not be enhanced, enriched or otherwise transformed into a derivative work, without express permission from Wiley or by statutory rights under applicable legislation. Copyright notices must not be removed, obscured or modified. The article must be linked to Wiley’s version of record on Wiley Online Library and any embedding, framing or otherwise making available the article or pages thereof by third parties from platforms, services and websites other than Wiley Online Library must be prohibited.

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