Single ferromagnetic layer magnetic random access memory

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Single ferromagnetic layer magnetic random access memory
Single ferromagnetic layer magnetic random access memory
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Journal of Applied Physics
Publication Date:
27 August 2013
J. Appl. Phys. 114, 084306 (2013)
We propose a magnetic random access memory (MRAM) device in which both the writing and reading processes are realized within a single ferromagnetic (FM) layer. The FM layer is sandwiched between layers of heavy element and oxide to enhance the Rashba spin-orbit coupling (RSOC). When the in-plane FM moments are oriented at some intermediate angle to the current direction, the RSOC effect induces a spin accumulation in the FM layer, which in turn generates a Rashba spin torque field via the s-d exchange interaction. This field acts as the writing field of the memory device. The RSOC also induces a charge accumulation in the transverse direction via the inverse spin Hall effect (ISHE), which can be used to realize the memory read-out. The writing and read-out processes of the proposed memory are modeled numerically via the non-equilibrium Green’s function technique. Besides the advantages of Rashba spin torque writing, i.e., no spin injection and symmetrical data-writing process, this single FM layer MRAM design does away with having a giant magnetoresistive or magnetic tunnel junction multilayer structure by utilizing the ISHE for the readout process.
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Copyright (2013) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in J. Appl. Phys. 114, 084306 (2013) and may be found at
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