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13 Jul 2016
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SERC
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Data Storage Institute
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CMOS compatible electrode materials selection in oxide-based memory devices
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V. Y.-Q. Zhuo,
M. Li,
Y. Guo,
W. Wang,
Y. Yang,
Y. Jiang,
J. Robertson
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Journal of Applied Physics
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21 Jan 2015
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SERC
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Data Storage Institute
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Nano suboxide layer generated in Ta2O5 by Ar+ ion irradiation
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R. Ji,
H. Q. Xie,
S. K. Ng,
W. D. Song,
V. Y.-Q. Zhuo,
J. F. Ying,
W. He,
Serene L. G. Ng,
Y. Jiang
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Applied Physics Letters
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27 Oct 2014
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SERC
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Data Storage Institute
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Novel Strained SiGe/TaOx/Ta RRAM Device Fabricated by Fully CMOS Compatible Process
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Y. Jiang,
C. C. Tan,
E. G. Yeo,
M. H. Li,
W. He,
V. Y.-Q. Zhuo,
Z. Fang,
B. B. Weng
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The 14th Non-Volatile Memory Technology Symposium (NVMTS 2014)
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27 Oct 2014
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SERC
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Data Storage Institute
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Self-compliance SET switching and multilevel TaOx resistive memory by current-sweep operation
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M. H. Li,
Y. Jiang,
V. Y. –Q. Zhuo,
E. –G. Yeo,
L. –T. Law,
K. –G. Lim
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Non-Volatile Memory Technology Symposium (NVMTS), 2014 14th Annual
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27 Aug 2013
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SERC
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Data Storage Institute
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Single ferromagnetic layer magnetic random access memory
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M.-J. Xing,
M. B. A. Jalil,
Seng Ghee Tan,
Y. Jiang
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Journal of Applied Physics
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11 Jul 2013
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SERC
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Data Storage Institute
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Improved Switching Uniformity and Low Voltage Operation in TaOx-based RRAM Using Ge Reactive Layer
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V. Y.-Q. Zhuo,
Y. Jiang,
R. Zhao,
L. P. Shi,
Y. Yang,
T.C Chong,
J. Robertson
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Electron Device Letters, IEEE
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