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16 Feb 2018 SERC Institute of Materials Research and Engineering Electronic properties of atomically thin MoS2 layers grown by physical vapour deposition: band structure and energy level alignment at layer/substrate interfaces Fabio Bussolotti, Jainwei Chai, Yang Ming, Hiroyo Kawai, Zheng Zhang, Shijie Wang, Swee Liang Wong, Carlos Manzano, Yuli Huang, DongZhi Chi, Kuan Eng Johnson Goh RSC Advances
16 Jan 2018 SERC Institute of Materials Research and Engineering Modification of Vapor Phase Concentrations in MoS2 Growth Using a NiO Foam Barrier Lim Yee-Fun, Priyadarshi Kumar, Bussolotti Fabio, Gogoi Pranjal Kumar, Cui Xiaoyang, Yang Ming, Pan Jisheng, Tong Shi Wun, Wang Shijie, Pennycook Stephen J., Goh Kuan Eng Johnson, Wee Andrew Thye Shen, Wong Swee Liang, Chi Dongzhi ACS Nano