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23 Jun 2021
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SERC
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Institute of Materials Research and Engineering
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N95 respirator decontamination: a study in reusability
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C.-G. Wang,
Z. Li,
S. Liu,
C.T. Ng,
M. Marzuki,
P.S. Jeslyn Wong,
B. Tan,
A. Lee,
C.F. Hui Lim,
P. Bifani,
Z. Fang,
J.C. Ching Wong,
Y.X. Setoh,
Y.Y. Yang,
C.H. Mun,
S.Z. Fiona Phua,
W.Q. Lim,
L. Lin,
A.R. Cook,
H. Tanoto,
L.-C. Ng,
A. Singhal,
Y.W. Leong,
X.J. Loh
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Materials Today Advances
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13 Jul 2016
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SERC
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Data Storage Institute
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CMOS compatible electrode materials selection in oxide-based memory devices
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V. Y.-Q. Zhuo,
M. Li,
Y. Guo,
W. Wang,
Y. Yang,
Y. Jiang,
J. Robertson
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Journal of Applied Physics
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1 Nov 2014
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SERC
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Data Storage Institute
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Investigations of stacking faults in stacked granular perpendicular recording media with a high anisotropy CoPt layer
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Y. Yang,
B. Varghese,
H.K. Tan,
S. K. Wong,
S.N. Piramanayagam
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Magnetics, IEEE Transactions on
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29 Jul 2014
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SERC
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Institute of Microelectronics
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Impact of Ni Concentration on the Performance of Ni Silicide/HfO2/TiN Resistive RAM (RRAM) Cells
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Z.X. Chen,
Z. Fang,
Y. Wang,
Y. Yang,
A. Kamath,
X.P. Wang,
N. Singh,
G.-Q. Lo,
D.-L. Kwong,
Y.H. Wu
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Journal of Electronic Materials
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11 Jul 2013
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SERC
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Data Storage Institute
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Improved Switching Uniformity and Low Voltage Operation in TaOx-based RRAM Using Ge Reactive Layer
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V. Y.-Q. Zhuo,
Y. Jiang,
R. Zhao,
L. P. Shi,
Y. Yang,
T.C Chong,
J. Robertson
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Electron Device Letters, IEEE
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