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23 Jun 2021
SERC
Institute of Materials Research and Engineering
N95 respirator decontamination: a study in reusability
C.-G. Wang,
Z. Li,
S. Liu,
C.T. Ng,
M. Marzuki,
P.S. Jeslyn Wong,
B. Tan,
A. Lee,
C.F. Hui Lim,
P. Bifani,
Z. Fang,
J.C. Ching Wong,
Y.X. Setoh,
Y.Y. Yang,
C.H. Mun,
S.Z. Fiona Phua,
W.Q. Lim,
L. Lin,
A.R. Cook,
H. Tanoto,
L.-C. Ng,
A. Singhal,
Y.W. Leong,
X.J. Loh
Materials Today Advances
13 Jul 2016
SERC
Data Storage Institute
CMOS compatible electrode materials selection in oxide-based memory devices
V. Y.-Q. Zhuo,
M. Li,
Y. Guo,
W. Wang,
Y. Yang,
Y. Jiang,
J. Robertson
Journal of Applied Physics
1 Nov 2014
SERC
Data Storage Institute
Investigations of stacking faults in stacked granular perpendicular recording media with a high anisotropy CoPt layer
Y. Yang,
B. Varghese,
H.K. Tan,
S. K. Wong,
S.N. Piramanayagam
Magnetics, IEEE Transactions on
29 Jul 2014
SERC
Institute of Microelectronics
Impact of Ni Concentration on the Performance of Ni Silicide/HfO2/TiN Resistive RAM (RRAM) Cells
Z.X. Chen,
Z. Fang,
Y. Wang,
Y. Yang,
A. Kamath,
X.P. Wang,
N. Singh,
G.-Q. Lo,
D.-L. Kwong,
Y.H. Wu
Journal of Electronic Materials
11 Jul 2013
SERC
Data Storage Institute
Improved Switching Uniformity and Low Voltage Operation in TaOx-based RRAM Using Ge Reactive Layer
V. Y.-Q. Zhuo,
Y. Jiang,
R. Zhao,
L. P. Shi,
Y. Yang,
T.C Chong,
J. Robertson
Electron Device Letters, IEEE
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