| Publication date | Communities | Collections | Article title | Author(s) | Journal/Conference |
|---|---|---|---|---|---|
| 13 Jul 2016 | SERC | Data Storage Institute | CMOS compatible electrode materials selection in oxide-based memory devices | V. Y.-Q. Zhuo, M. Li, Y. Guo, W. Wang, Y. Yang, Y. Jiang, J. Robertson | Journal of Applied Physics |