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Publication date Communities Collections Article title Author(s) Journal/Conference
13 Jul 2016 SERC Data Storage Institute CMOS compatible electrode materials selection in oxide-based memory devices V. Y.-Q. Zhuo, M. Li, Y. Guo, W. Wang, Y. Yang, Y. Jiang, J. Robertson Journal of Applied Physics
21 Jan 2015 SERC Data Storage Institute Nano suboxide layer generated in Ta2O5 by Ar+ ion irradiation R. Ji, H. Q. Xie, S. K. Ng, W. D. Song, V. Y.-Q. Zhuo, J. F. Ying, W. He, Serene L. G. Ng, Y. Jiang Applied Physics Letters
27 Oct 2014 SERC Data Storage Institute Novel Strained SiGe/TaOx/Ta RRAM Device Fabricated by Fully CMOS Compatible Process Y. Jiang, C. C. Tan, E. G. Yeo, M. H. Li, W. He, V. Y.-Q. Zhuo, Z. Fang, B. B. Weng The 14th Non-Volatile Memory Technology Symposium (NVMTS 2014)
11 Jul 2013 SERC Data Storage Institute Improved Switching Uniformity and Low Voltage Operation in TaOx-based RRAM Using Ge Reactive Layer V. Y.-Q. Zhuo, Y. Jiang, R. Zhao, L. P. Shi, Y. Yang, T.C Chong, J. Robertson Electron Device Letters, IEEE