| Publication date | Communities | Collections | Article title | Author(s) | Journal/Conference |
|---|---|---|---|---|---|
| 16 May 2015 | SERC | Institute of Microelectronics | Effect of Carbon Doping and Crystalline Quality on the Vertical Breakdown Characteristics of GaN Layers Grown on 200-mm Silicon Substrates | Weizhu Wang, Susai Laverence Selvaraj, Kay Thi Win, Thirumaleshwara Bhat, Sudhiranjan Tripathy, Guo-Qiang Lo | Journal of Electronic Materials |