| Publication date | Communities | Collections | Article title | Author(s) | Journal/Conference |
|---|---|---|---|---|---|
| 20 Mar 2015 | SERC | Data Storage Institute | An Optimized Resistance Characterization Technique for the Next Generation Magnetic Random Access Memory | Fei Li, Sunny Yan Hwee Lua, Aarthy Mani | Nanotechnology, IEEE Transactions on |