Publication date | Communities | Collections | Article title | Author(s) | Journal/Conference |
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11 Jul 2013 | SERC | Data Storage Institute | Improved Switching Uniformity and Low Voltage Operation in TaOx-based RRAM Using Ge Reactive Layer | V. Y.-Q. Zhuo, Y. Jiang, R. Zhao, L. P. Shi, Y. Yang, T.C Chong, J. Robertson | Electron Device Letters, IEEE |