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Publication date Communities Collections Article title Author(s) Journal/Conference
6 Jun 2023 SERC Institute of Sustainability for Chemicals, Energy and Environment Coconut husk-derived biochar for enhancing electrochemical conversion of CO2 Y.C. Tan, S. Jia, J. Tan, Y. Leow, R. Zheng, X.Y. Tan, S.B. Dolmanan, M. Zhang, P.Y.M. Yew, X.P. Ni, Q. Zhu, J. Xu, X.J. Loh, S. Ramakrishna, D. Kai Materials Today Chemistry
2 Jun 2023 SERC Institute of Materials Research and Engineering Tailoring surface reflectance through nanostructured materials design for energy-efficient applications R.J. Yeo, W.-Y. Wu, N. Tomczak, R. Ji, S. Wang, X. Wang, J. Kong, H. Liu, K.E.J. Goh, J. Xu, X.J. Loh, Q. Zhu Materials Today Chemistry
1 Jul 2022 SERC Institute of Materials Research and Engineering Advances in sustainable polymeric materials from lignocellulosic biomass S. Sugiarto, R.R. Pong, Y.C. Tan, Y. Leow, T. Sathasivam, Q. Zhu, X.J. Loh, D. Kai Materials Today Chemistry
13 Jul 2016 SERC Data Storage Institute CMOS compatible electrode materials selection in oxide-based memory devices V. Y.-Q. Zhuo, M. Li, Y. Guo, W. Wang, Y. Yang, Y. Jiang, J. Robertson Journal of Applied Physics
21 Jan 2015 SERC Data Storage Institute Nano suboxide layer generated in Ta2O5 by Ar+ ion irradiation R. Ji, H. Q. Xie, S. K. Ng, W. D. Song, V. Y.-Q. Zhuo, J. F. Ying, W. He, Serene L. G. Ng, Y. Jiang Applied Physics Letters
27 Oct 2014 SERC Data Storage Institute Self-compliance SET switching and multilevel TaOx resistive memory by current-sweep operation M. H. Li, Y. Jiang, V. Y. –Q. Zhuo, E. –G. Yeo, L. –T. Law, K. –G. Lim Non-Volatile Memory Technology Symposium (NVMTS), 2014 14th Annual
27 Oct 2014 SERC Data Storage Institute Novel Strained SiGe/TaOx/Ta RRAM Device Fabricated by Fully CMOS Compatible Process Y. Jiang, C. C. Tan, E. G. Yeo, M. H. Li, W. He, V. Y.-Q. Zhuo, Z. Fang, B. B. Weng The 14th Non-Volatile Memory Technology Symposium (NVMTS 2014)
11 Jul 2013 SERC Data Storage Institute Improved Switching Uniformity and Low Voltage Operation in TaOx-based RRAM Using Ge Reactive Layer V. Y.-Q. Zhuo, Y. Jiang, R. Zhao, L. P. Shi, Y. Yang, T.C Chong, J. Robertson Electron Device Letters, IEEE