| Publication date | Communities | Collections | Article title | Author(s) | Journal/Conference |
|---|---|---|---|---|---|
| 9 Jun 2016 | SERC | Institute of Microelectronics | The physical mechanism on the threshold voltage temperature stability improvement for GaN HEMTs with pre-fluorination argon treatment | Yun-Hsiang Wang, Yung Chii Liang, Genesh Shankar Samudra, Chih-Fang Huang, Wei-Hung Kuo, Guo-Qiang Lo | Applied Physics Letters |