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Publication date Communities Collections Article title Author(s) Journal/Conference
22 Mar 2016 SERC Institute of Materials Research and Engineering P-type Ge epitaxy on GaAs (100) substrate grown by MOCVD (Pending publish) Y.J. Jin, C.K. Chia, H.F. Liu, L.M. Wong, J.W. Chai, D.Z. Chi, S.J. Wang Applied Surface Science