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Publication date Communities Collections Article title Author(s) Journal/Conference
21 May 2025 SERC Institute of Microelectronics Trapping Effect in AlN/GaN/AlGaN High‐Electron‐Mobility Transistors Revealed by Tristate Pulse IV Technique Yihao Zhuang, Kumud Ranjan, Qingyun Xie, Hanlin Xie, Hanchao Li, Yue Wang, Siyu Liu, Geok Ing Ng physica status solidi (a)
10 Apr 2025 SERC Singapore Institute of Manufacturing Technology Transient asymmetry during elastic snap-through: The interplay between imperfections and oscillations Andrea Giudici, Weicheng Huang, Qiong Wang, Yuzhe Wang, Mingchao Liu, Sameh Tawfick, Dominic Vella Physical Review E
10 Feb 2025 SERC Institute of Microelectronics Analysis of Leakage Channel with Different Al Composition back Barriers in AlN/GaN High‐Electron‐Mobility Transistors on Silicon Siyu Liu, Yihao Zhuang, Hanchao Li, Pengju Cui, Qingyun Xie, Yue Wang, Hanlin Xie, Kumud Ranjan, Geok Ing Ng physica status solidi (a)
7 Nov 2024 SERC Institute of Microelectronics 1.6 Tbps FOWLP-Based Silicon Photonic Engine for Co-Packaged Optics Xin Li, Sajay Bhuvanendran Nair Gourikutty, Jiaqi Wu, Teck Guan Lim, Pengfei Guo, Jaye Charles Davies, Edward Sing Chee Koh, Boon Long Lau, Ming Chinq Jong, Ser Choong Chong, San Sandra, Chao Li, Guo-Qiang Lo, Surya Bhattacharya, Jason Tsung-Yang Liow Journal of Lightwave Technology
23 Oct 2024 SERC Institute of Microelectronics A Hybrid GaN HEMT Model Merging Artificial Neural Networks and ASM-HEMT for Parameter Precision and Scalability Zhongzhiguang Lu, Hanchao Li, Hanlin Xie, Yihao Zhuang, Wang Wensong, Ng Geok Ing, Yuanjin Zheng IEEE Transactions on Electron Devices
21 Oct 2024 SERC Institute of Microelectronics AlN/GaN/AlGaN-on-Si HEMT Achieving 1.3 W/mm at 5 V for 5G FR2 Handsets Hanchao Li, Hanlin Xie, Qingyun Xie, Siyu Liu, Yue Wang, Yuxuan Wang, Kumud Ranjan, Yihao Zhuang, Xiao Gong, Geok Ing Ng IEEE Electron Device Letters
11 Jul 2024 SERC Institute of Microelectronics Variable range hopping-assisted parasitic channel leakage in AlN/GaN/AlGaN HEMTs on Si Siyu Liu, Yihao Zhuang, Hanchao Li, Qingyun Xie, Yue Wang, Hanlin Xie, Kumud Ranjan, Geok Ing Ng Applied Physics Letters
22 Jun 2024 SERC Institute of Microelectronics Change of chemical bonding properties at SiNx/GaN/AlGaN interface with SiH4 flow rate and its impact on the carrier transport properties of MIS-diodes Pradip Dalapati, Subramaniam Arulkumaran, Dinesh Mani, Hanchao Li, Hanlin Xie, Yue Wang, Geok Ing Ng Materials Science and Engineering: B
9 Jun 2024 SERC Institute of High Performance Computing  EVALUATION OF OFFSHORE WIND POWER PRODUCTION IN EXTREME WIND CONDITIONS Xuan Liu, Xiaoqin Zhang, Xiuqing Xing, Chang Wei Kang, Venugopalan Raghavan, Vinh Tan Nguyen, Jichao Li OMAE2024
16 May 2024 SERC Institute of Microelectronics First Demonstration of High‐Frequency InAlN/GaN High‐Electron‐Mobility Transistor Using GaN‐on‐Insulator Technology via 200 mm Wafer Bonding Hanchao Li, Hanlin Xie, Yue Wang, Lekina Yulia, Kumud Ranjan, Navab Singh, Surasit Chung, Kenneth E. Lee, Subramaniam Arulkumaran, Geok Ing Ng physica status solidi (a)