| Publication date | Communities | Collections | Article title | Author(s) | Journal/Conference |
|---|---|---|---|---|---|
| 29 Jul 2014 | SERC | Institute of Microelectronics | Impact of Ni Concentration on the Performance of Ni Silicide/HfO2/TiN Resistive RAM (RRAM) Cells | Z.X. Chen, Z. Fang, Y. Wang, Y. Yang, A. Kamath, X.P. Wang, N. Singh, G.-Q. Lo, D.-L. Kwong, Y.H. Wu | Journal of Electronic Materials |