Efficient FWM-Based Wavelength Conversion in Deuterated Ultra-Silicon-Rich Nitride (USRN:D)

Efficient FWM-Based Wavelength Conversion in Deuterated Ultra-Silicon-Rich Nitride (USRN:D)

2024 Photonics North (PN)

10.1109/PN62551.2024.10621825

http://dx.doi.org/10.1109/pn62551.2024.10621825

Xavier X. Chia, Hongwei Gao, Kenny Y. K. Ong, George F. R. Chen, Ju-Won Choi, Jia Sheng Goh, Doris K-.T. Ng, Dawn T. H. Tan

Nonlinear optics, silicon-rich nitride, four-wave mixing, nonlinear wavelength convertors

14 August 2024

Chia, X. X., Gao, H., Ong, K. Y. K., Chen, G. F. R., Choi, J.-W., Goh, J. S., Ng, D. K.-. T., & Tan, D. T. H. (2024). Efficient FWM-Based Wavelength Conversion in Deuterated Ultra-Silicon-Rich Nitride (USRN:D). 2024 Photonics North (PN), 1–2. https://doi.org/10.1109/pn62551.2024.10621825

We demonstrate highly nonlinear devices fabricated on deuterated ultra-silicon-rich nitride (USRN:D). Waveguides with nonlinear parameters as high as 166 W-1 m-1 are used as wavelength convertors, attaining a conversion efficiency of -43.2 dB over a waveguide length of just 1 cm.

Publisher Copyright

This research is supported by core funding from: Institute of Microelectronics
Grant Reference no. :

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