Parasitic Surface Conduction Effect of TSV on Interconnection Performance in RF SOI for 2.5D Integration

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Parasitic Surface Conduction Effect of TSV on Interconnection Performance in RF SOI for 2.5D Integration
Title:
Parasitic Surface Conduction Effect of TSV on Interconnection Performance in RF SOI for 2.5D Integration
Journal Title:
2023 IEEE 25th Electronics Packaging Technology Conference (EPTC)
Keywords:
Publication Date:
18 March 2024
Citation:
Lin, Z., Guan, L. T., Jiaqi, W., Feng, X., Chinq, J. M., & Chyn, N. Y. (2023, December 5). Parasitic Surface Conduction Effect of TSV on Interconnection Performance in RF SOI for 2.5D Integration. 2023 IEEE 25th Electronics Packaging Technology Conference (EPTC). https://doi.org/10.1109/eptc59621.2023.10457708
Abstract:
Silicon interposer is being widely used for 2.5D integration due to its advanced performance. However, the resistivity of the silicon can be impacted by the parasitic surface conduction (PSC) near the Si-SiO2 interface, especially for the space around through silicon vias (TSVs) where trap-rich layer cannot be created to alleviate the PSC effect. In this paper, the PSC effect of the TSV on the interconnection performance in a RF silicon on insulator (SOI) wafer is analyzed. A TSV GSG connection with a thin effective-resistivity layer of different resistivities presenting the low resistivity introduced by the PSC effect is simulated and analyzed. Moreover, a series of test structures is fabricated on a RF SOI wafer. The S parameters are measured and lumped RLGC parameters are analyzed. The simulated and measured results both demonstrate an increased loss of the TSV connection. The results are useful for future high- performance 2.5D integration design.
License type:
Publisher Copyright
Funding Info:
This research / project is supported by the National Research Foundation, Singapore - Singapore Hybrid-Integrated Next-Generation µ-Electronics (SHINE) Centre Funding Programe
Grant Reference no. : N/A
Description:
© 2024 IEEE.  Personal use of this material is permitted.  Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
ISSN:
979-8-3503-2957-5
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