An, B.-K., Zhang, X., Do, A. T., & Kim, T. T.-H. (2023, June 26). Design of a Current Sense Amplifier with Dynamic Reference for Reliable Resistive Memory. 2023 21st IEEE Interregional NEWCAS Conference (NEWCAS). https://doi.org/10.1109/newcas57931.2023.10198038
Abstract:
Resistive random-access memory (RRAM), as an emerging memory, has a resistance difference between a high resistance state(HRS) and a low resistance state(LRS). It has received a lot of attention due to its large R-ratio (RHRS/RLRS), high density, and low power consumption. However, the wide resistance variation of RRAM makes it suffer from read errors due to the limited sensing margin. To improve the sensing margin and resistance to variations, this paper proposed a current sense amplifier (CSA) assisted with dynamic reference (DR-CSA) for RRAM. Compared with the conventional CSA, the proposed sense amplifier reduces the read latency and energy by up to 53% and 30%, respectively. Simulation results show that the proposed DR-CSA achieves a read latency of 0.84 ns for a 64 Kb RRAM array with a reading current of 1μA at 1.1 V.
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Funding Info:
This research / project is supported by the A*STAR - Spin-Orbit Technologies for intelligence at the Edge (SpOT-LITE)
Grant Reference no. : A18A6b0057
This research / project is supported by the Ministry of Education, Singapore - AcRF Tier-2
Grant Reference no. : MOE-T2EP50221-0001