Chen, L., Wang, Z., Liu, C., Li, M., Song, W., Wang, W., Varghese, B., Lee, H. K., Lin, H., & Zhu, Y. (2023, July 23). Leakage Mechanism of Ferroelectric Al0.7Sc0.3N Ultra-thin Film. 2023 IEEE International Symposium on Applications of Ferroelectrics (ISAF). https://doi.org/10.1109/isaf53668.2023.10265450
Abstract:
The remarkable ferroelectric properties discovered in scandium-doped aluminum nitride (AlScN) has generated tremendous research interest. Preliminary investigations indicate that the Al 1-x Sc x N could encounter substantial leakage current when scales down the thickness, potentially limiting its practical implementation on memory applications. In this work, taking the 50 nm and 30 nm ultra-thin Al 0.7 Sc 0.3 N films as vehicle, we systematically analyzed the key factor contributing the leakage current via Poole-Frenkel (P-F) emission fitting. The result shows that it is the defect concentration leading to the large leakage instead of the trap energy level (Φ T ).
License type:
Publisher Copyright
Funding Info:
This research / project is supported by the A*STAR - Ferroelectric Aluminum Scandium Nitride (Al1-xScxN) Thin Films and Devices for mm-Wave and Edge Computing (WP06)
Grant Reference no. : A20G9b0135