Thermal Assisted Intermixing at AlScN/Pt Interfaces

Thermal Assisted Intermixing at AlScN/Pt Interfaces

2023 IEEE International Symposium on Applications of Ferroelectrics (ISAF)

10.1109/ISAF53668.2023.10265669

http://dx.doi.org/10.1109/isaf53668.2023.10265669

Minghua Li, Wendong Song, Chen Liu, Li Chen, Huamao Lin, Yao Zhu

29 September 2023

Li, M., Song, W., Liu, C., Chen, L., Lin, H., & Zhu, Y. (2023, July 23). Thermal Assisted Intermixing at AlScN/Pt Interfaces. 2023 IEEE International Symposium on Applications of Ferroelectrics (ISAF). https://doi.org/10.1109/isaf53668.2023.10265669

Ti/Pt/Al 0.6 Sc 0.4 N/Pt capacitor structure was fabricated. Post-annealing was carried out in nitrogen atmosphere at temperature up to 800 °C to evaluate the thermal stability of the AlScN/Pt interfaces. Material characterization revealed that the AlScN (0002) and the Pt (111) textures remained stable until the annealing temperature did not exceed 500 °C. Annealing at 600 °C and above resulted in notable Pt diffused into the AlScN film, and the bottom Pt reacted with the Si substrate to form PtSi. The thermal assisted intermixing reduced the effective dielectric thickness. Lower dielectric breakdown voltage was thus recorded.

Publisher Copyright

This research / project is supported by the A*STAR - Ferroelectric Aluminum Scandium Nitride (Al1-xScxN) Thin Films and Devices for mm-Wave and Edge Computing (WP05)
Grant Reference no. : A20G9b0135

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2375-0448

Institute of Microelectronics