Thermal Assisted Intermixing at AlScN/Pt Interfaces

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Thermal Assisted Intermixing at AlScN/Pt Interfaces
Title:
Thermal Assisted Intermixing at AlScN/Pt Interfaces
Journal Title:
2023 IEEE International Symposium on Applications of Ferroelectrics (ISAF)
Keywords:
Publication Date:
29 September 2023
Citation:
Li, M., Song, W., Liu, C., Chen, L., Lin, H., & Zhu, Y. (2023, July 23). Thermal Assisted Intermixing at AlScN/Pt Interfaces. 2023 IEEE International Symposium on Applications of Ferroelectrics (ISAF). https://doi.org/10.1109/isaf53668.2023.10265669
Abstract:
Ti/Pt/Al 0.6 Sc 0.4 N/Pt capacitor structure was fabricated. Post-annealing was carried out in nitrogen atmosphere at temperature up to 800 °C to evaluate the thermal stability of the AlScN/Pt interfaces. Material characterization revealed that the AlScN (0002) and the Pt (111) textures remained stable until the annealing temperature did not exceed 500 °C. Annealing at 600 °C and above resulted in notable Pt diffused into the AlScN film, and the bottom Pt reacted with the Si substrate to form PtSi. The thermal assisted intermixing reduced the effective dielectric thickness. Lower dielectric breakdown voltage was thus recorded.
License type:
Publisher Copyright
Funding Info:
This research / project is supported by the A*STAR - Ferroelectric Aluminum Scandium Nitride (Al1-xScxN) Thin Films and Devices for mm-Wave and Edge Computing (WP05)
Grant Reference no. : A20G9b0135
Description:
© 2023 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
ISSN:
2375-0448
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