Chen, L., Liu, C., Wang, Z., Li, M., Song, W., Wang, W., & Zhu, Y. (2023, July 23). In-wafer Stress-dependent Leakage Current in Ferroelectric Scandium-doped Aluminum Nitride. 2023 IEEE International Symposium on Applications of Ferroelectrics (ISAF). https://doi.org/10.1109/isaf53668.2023.10265584
Abstract:
Recently, the discovery of ferroelectricity in scandium-doped aluminum nitride (Al 1-x Sc x N) makes it a promising candidate to be used for next-generation ferroelectric memory applications. However, the large operating voltage hinders its practical use owing to its relatively large coercive field (E c ), which can be potentially reduced by strain engineering. Nevertheless, the relationship between stress and leakage current has not been investigated yet. In this work, we study the correlation between in-plane stress of AlScN film and leakage current of the ferroelectric Al 0.7 Sc 0.3 N-based capacitors. We observe that the leakage current relies closely on the film stress, in which less compressive stress will lead to smaller leakage current, providing the guidance for optimizing the film quality.
License type:
Publisher Copyright
Funding Info:
This research / project is supported by the A*STAR - Ferroelectric Aluminum Scandium Nitride (Al1-xScxN) Thin Films and Devices for mm-Wave and Edge Computing (WP06)
Grant Reference no. : A20G9b0135