Shashwat, B., Liu, C., Yang, W., Zhang, Y., Wang, X., Yi Zhun, E. W., & Zhu, Y. (2023, September 3). Impact of In-Plane Residual Stress on The Performance of The Film Bulk Acoustic Resonators. 2023 IEEE International Ultrasonics Symposium (IUS). https://doi.org/10.1109/ius51837.2023.10306787
Abstract:
This paper presents the effect of in-plane residual stress on the design parameters such as resonance frequency and coupling coefficient of the Film Bulk Acoustic Resonator (FBAR) in accordance with the enhanced experimental buckling observed in the FBAR. The deformation in the film is due to the asymmetry of unequal top and bottom electrode thickness. The simulation models the individual impact that the residual stress has on the geometric and material properties of the thin piezoelectric film. The sensitivities of the individual impact provide design considerations for FBAR. The stack that has an equal thickness of the top and bottom electrodes provides less deformation and a predictive trend of frequency. The asymmetry can be used if slight tensile stress from the process integration can be obtained as it enhances the coupling coefficient.
License type:
Publisher Copyright
Funding Info:
This research / project is supported by the A*STAR - Ferroelectric Aluminum Scandium Nitride (Al1-xScxN) Thin Films and Devices for mm-Wave and Edge Computing (WP05)
Grant Reference no. : A20G9b0135
This research / project is supported by the A*STAR - Nanosystems at the Edge (WP01)
Grant Reference no. : A18A4b0055