Lu, L., Mani, A., & Do, A. T. (2023, May 21). A 129.83 TOPS/W Area Efficient Digital SOT/STT MRAM-Based Computing-In-Memory for Advanced Edge AI Chips. 2023 IEEE International Symposium on Circuits and Systems (ISCAS). https://doi.org/10.1109/iscas46773.2023.10181328
Abstract:
This paper proposes a spin-orbit torque (SOT) magnetoresistive random access memory (MRAM)-based digital computing in memory (CIM) structure for advanced CIM edge AI chips. To avoid frequent data reloading and reduce the area overhead caused by the large transistor in the write path, 11 transistors and 4 shared heavy metal (HM) SOT MRAM bitcell is proposed. It contains 4b weight in a single cell in a compact area able to hold a large capacity with reduced latency. Compared to the previous SRAM+NOR digital CIM design, the SOT/STT MRAM CIM designs occupy only 40% and 30% bitcell area respectively. Additionally, SOT MRAM has a 1.16% leakage current of SRAM at the TT corner at room temperature. The proposed design is verified using statistic simulations in 28nm technology. It achieves 129.83 TOPS/W at 1b/1b/8b precision.
License type:
Publisher Copyright
Funding Info:
This research / project is supported by the A*STAR - Spin-Orbit Technologies for intelligence at the Edge (SpOT-LITE)
Grant Reference no. : A18A6b0057