A Precise Wafer Thinning Integration Process for nano-TSV Formation

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A Precise Wafer Thinning Integration Process for nano-TSV Formation
Title:
A Precise Wafer Thinning Integration Process for nano-TSV Formation
Journal Title:
2023 IEEE 73rd Electronic Components and Technology Conference (ECTC)
Keywords:
Publication Date:
03 August 2023
Citation:
Tseng, Y.-C., Kiat Goh, S. C., Darshini, S., Venkataraman, N., Sundaram, A., Khang, T. C., Ok, Y. J., & Chui, K.-J. (2023, May). A Precise Wafer Thinning Integration Process for nano-TSV Formation. 2023 IEEE 73rd Electronic Components and Technology Conference (ECTC). https://doi.org/10.1109/ectc51909.2023.00200
Abstract:
This paper proposes the use of a Silicon-On-Insulator (SOI) substrate to control the final Si thickness on the substrate. After direct wafer-to-wafer bonding to another Si carrier wafer, a combination of grinding and etching is used to remove the Si substrate of the SOI wafer to expose the underlying BOX layer. Selective wet-etch process is then employed to remove the buried oxide (BOX) to stop on the thin SOI layer. Due to good wet etch selectivity between the BOX (oxide) and SOI Si, the remaining SOI Si thickness can be very well-controlled. In this paper, 175nm of remaining Si can be demonstrated on the bonded SOI wafer using this method. This method can be easily extended to even thinner final Si layers beyond 100nm. Nano-Tsvs with dimension of 300nm diameter and 500nm depth are then fabricated on the thinned SOI which is bonded to another carrier wafer.
License type:
Publisher Copyright
Funding Info:
This research / project is supported by the A*STAR - Hardware-Software Co-optimisation for Deep Learning
Grant Reference no. : A1892b0026
Description:
© 2023 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
ISSN:
2377-5726
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