Demonstration of a CMOS-Compatible Superconducting Cryogenic Interposer for Advanced Quantum Processors

Demonstration of a CMOS-Compatible Superconducting Cryogenic Interposer for Advanced Quantum Processors

2023 IEEE 73rd Electronic Components and Technology Conference (ECTC)

10.1109/ECTC51909.2023.00109

http://dx.doi.org/10.1109/ectc51909.2023.00109

King-Jien Chui, Hongyu Li, Yong Chyn Ng, Chit Siong Lau, K. E. J. Goh, D. Huang, Ya-Ching Tseng, J. K. Chen, H. Yu, B. N. Jaafar, H. Lin, B. Varghese

03 August 2023

Chui, K.-J., Li, H., Ng, Y. C., Lau, C. S., Goh, K. E. J., Huang, D., Tseng, Y.-C., Chen, J. K., Yu, H., Jaafar, B. N., Lin, H., & Varghese, B. (2023, May). Demonstration of a CMOS-Compatible Superconducting Cryogenic Interposer for Advanced Quantum Processors. 2023 IEEE 73rd Electronic Components and Technology Conference (ECTC). https://doi.org/10.1109/ectc51909.2023.00109

An advanced quantum processor requires millions of qubits but is at present limited in scalability due to limitations in the wiring of qubits. A 2.5D silicon (Si) interposer provides an attractive solution in enabling the scalability of the qubit devices. However, some qubits, like the superconducting qubits and solid-state spin-orbit qubits, operate in cryogenic temperatures below 1K. Copper (Cu) interconnects in conventional Si interposers are not superconductive in nature. As such, these metals contribute to losses and result in resistive heating, which can undesirably increase the temperature of the qubits during operation. This paper reports the full demonstration and electrical characterization of a cryogenic interposer with superconducting interconnects and TSV, using CMOS compatible materials like Aluminium (Al), Titanium (Ti), Titanium Nitride (TiN) and Tantalum (Ta).

Publisher Copyright

This research is supported by core funding from: A*STAR Delta-Q
Grant Reference no. : C210917001

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2377-5726

Institute of Microelectronics