Emerging Opportunities for Ferroelectric Field‐Effect Transistors: Integration of 2D Materials

Emerging Opportunities for Ferroelectric Field‐Effect Transistors: Integration of 2D Materials

Advanced Functional Materials

10.1002/adfm.202310438

http://dx.doi.org/10.1002/adfm.202310438

Fang Yang, Hong Kuan Ng, Xin Ju, Weifan Cai, Jing Cao, DongZhi Chi, Ady Suwardi, Guangwei Hu, Zhenhua Ni, Xiao Renshaw Wang, Junpeng Lu, Jing Wu

01 February 2024

Yang, F., Ng, H. K., Ju, X., Cai, W., Cao, J., Chi, D., Suwardi, A., Hu, G., Ni, Z., Wang, X. R., Lu, J., & Wu, J. (2024). Emerging Opportunities for Ferroelectric Field‐Effect Transistors: Integration of 2D Materials. Advanced Functional Materials. Portico. https://doi.org/10.1002/adfm.202310438

AbstractThe rapid development in information technologies necessitates rapid advancements of their supporting hardware. In particular, new computing paradigms are needed to overcome the bottleneck of traditional von Neumann architecture. Bottom‐up innovation, especially at the materials and devices level, has the potential to disrupt existing technologies through their emergent phenomena. As a new type of conceptual device, 2D ferroelectric field‐effect transistor (FeFET) is highly sought after due to its potential integration with modern semiconductor processes. Its low power consumption, area efficiency, and ultra‐fast operation provide an extra edge over traditional technologies. This review highlights recent developments in 2D FeFET, covering their device construction, working mechanisms, 2D ferroelectric polarization mechanism, multi‐functional applications and prospects. In particular, the combination of 2D semiconductor and ferroelectric dielectric materials for multi‐functionality applications is discussed. This includes non‐volatile memories (NVM), neural network computing, non‐volatile logic operation, and photodetectors. As a novel device platform, 2D semiconductor and ferroelectric interfaces are bestowed with a plethora of emergent physical mechanisms and applications.

Publisher Copyright

This research / project is supported by the Agency for Science, Technology and Research (A*STAR) - Advanced Manufacturing and Engineering Young Individual Research Grant
Grant Reference no. : A2084c0170

This research / project is supported by the National Research Foundation - Competitive Research Programs
Grant Reference no. : NRFCRP24-2020-0002

This research / project is supported by the Singapore Ministry of Education - Academic Research Fund (AcRF) Tier 2
Grant Reference no. : MOE-T2EP50220-0005

This research / project is supported by the Agency for Science, Technology and Research (A*STAR) - AME Individual Research Grant (IRG)
Grant Reference no. : A20E5c0094

This research / project is supported by the Agency for Science, Technology and Research (A*STAR) - SERC Central Research Fund (CRF)
Grant Reference no. : NA

National Natural Science Foundation of China (grant no. 62174026, 62225404, 61927808)

This is the peer reviewed version of the following article: Yang, F., Ng, H. K., Ju, X., Cai, W., Cao, J., Chi, D., Suwardi, A., Hu, G., Ni, Z., Wang, X. R., Lu, J., & Wu, J. (2024). Emerging Opportunities for Ferroelectric Field‐Effect Transistors: Integration of 2D Materials. Advanced Functional Materials. Portico. https://doi.org/10.1002/adfm.202310438, which has been published in final form at doi.org/10.1002/adfm.202310438. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions. This article may not be enhanced, enriched or otherwise transformed into a derivative work, without express permission from Wiley or by statutory rights under applicable legislation. Copyright notices must not be removed, obscured or modified. The article must be linked to Wiley’s version of record on Wiley Online Library and any embedding, framing or otherwise making available the article or pages thereof by third parties from platforms, services and websites other than Wiley Online Library must be prohibited.

https://oar.a-star.edu.sg/communities-collections/articles/19764

1616-3028
1616-301X

Institute of Materials Research and Engineering