Lin, D. J. X., Lim, B. C., Hnin, Y. Y. K., Lim, N. C. B., Lee, H. Y. L., Tan, H. K., Lim, R. J. J., Chen, S., & Ho, P. (2023). Strain- and Temperature-Modulated Growth of Mn3Ga Films. Journal of Electronic Materials. https://doi.org/10.1007/s11664-023-10813-z
Abstract:
Antiferromagnetic (AF) and ferrimagnetic (FiM) thin films have demonstrable burgeoning significance to prospective spintronics applications. From the idiosyncrasy in parasitic stray field mitigation to ultrafast low power switching, this underpins felicitous properties for incorporating AF and FiM films in functional memory and computing devices. Mn3Ga adaptably features a multitude of spin orders that can be meticulously controlled with stoichiometry, temperature, and strain modulations. In this work, we have carefully designed three suitable stacks of Mn3Ga thin films on single crystal MgO, STO and STO/Ta substrates deposited across varying substrates temperature. The delicate interplay of strain and temperature tuning is examined by characterizing their magnetic, crystallographic, and morphological properties. Their non-directional magnetic anisotropy and saturation magnetization coincide well with corresponding tetragonal FiM and hexagonal AF Mn3Ga phases. Importantly, we observed that STO strain-regulated tetragonal phase is stabilized over a larger temperature window and provides more compact, uniformly sized granular growth. This work establishes a sturdy methodology in understanding Mn3Ga thin film growth for eventual AF and FiM-based memory and computing applications.
License type:
Publisher Copyright
Funding Info:
This research is supported by core funding from: A*STAR, IMRE, Career Development Fund (CDF)
Grant Reference no. : C210812017
Description:
This version of the article has been accepted for publication, after peer review and is subject to Springer Nature’s AM terms of use, but is not the Version of Record and does not reflect post-acceptance improvements, or any corrections. The Version of Record is available online at: http://dx.doi.org/10.1007/s11664-023-10813-z