Bi-layer in-situ phosphorus doped poly-Si films by PECVD for blistering-free high-efficiency industrial TOPCon solar cells

Bi-layer in-situ phosphorus doped poly-Si films by PECVD for blistering-free high-efficiency industrial TOPCon solar cells

Solar Energy Materials and Solar Cells

10.1016/j.solmat.2024.112771

http://dx.doi.org/10.1016/j.solmat.2024.112771

S. Ma, B. Liao, D.X. Du, D. Ding, C. Gao, Z.P. Li, Q. Wang, X.Y. Wu, S. Zou, X. Su, R.J. Yeo, X. Li, W.M. Li, X.Y. Kong, W.Z. Shen

Electronic, Optical and Magnetic Materials, Surfaces, Coatings and Films, Sustainability and the Environment, renewable energy

22 February 2024

Ma, S., Liao, B., Du, D. X., Ding, D., Gao, C., Li, Z. P., Wang, Q., Wu, X. Y., Zou, S., Su, X., Yeo, R. J., Li, X., Li, W. M., Kong, X. Y., & Shen, W. Z. (2024). Bi-layer in-situ phosphorus doped poly-Si films by PECVD for blistering-free high-efficiency industrial TOPCon solar cells. Solar Energy Materials and Solar Cells, 269, 112771. https://doi.org/10.1016/j.solmat.2024.112771

The passivating contact concept stands out as one of the most promising and industrially viable photovoltaic (PV) technologies. Further improving the quality of physical contact has become a focus of ongoing research. The film blistering issue has been identified as one of the major bottlenecks for the polysilicon (poly-Si) films deposited by the PECVD approach. In this study, we investigated how the in-situ phosphorus (P) doping level within the poly-Si films contributes to the occurrence of blistering. Our investigations into the film blistering mechanisms reveal that a high in-situ P-doping suppresses hydrogen release levels and reduces the accumulation of residual stress during annealing, which leads to the blistering-free appearance, especially observed in heavily P-doped poly-Si films. However, as excessive P-doping could weaken the interfacial passivation quality, we propose a bi-layer structure of P-doped poly-Si films which allows the doping profile to be tailored and maintain good quality passivating contacts. Based on the bi-layer structure, we fabricated industrial-sized tunnel oxide passivated contact (TOPCon) solar cells, which attained an average efficiency of 23.84%. Our work not only presents a promising strategy for improving the performance of passivating contacts via the PECVD approach but also underscores the significant potential for its widespread implementation in industrial TOPCon solar cell manufacturing.

Attribution-NonCommercial-NoDerivatives 4.0 International (CC BY-NC-ND 4.0)

This work was supported by the Major State Basic Research Development Program of China (Grant No. 2020YFB1505502).

This work was supported by the National Natural Science Foundation of China (Nos. 11974242, 11834011 and 52202276).

This work was supported by the Inner Mongolia Science and Technology Project (Grant No. 2022JBGS0036).

B. L. acknowledges the funding support from the Jiangsu Specially-Appointed Professor program (Grant No. 06210061007).

B. L. acknowledges the funding support from the Research Funding for High-level Talents of Nantong University (No. 03083035).

https://oar.a-star.edu.sg/communities-collections/articles/19643

0927-0248

Institute of Materials Research and Engineering