Citation:
Ma, S., Liao, B., Du, D. X., Ding, D., Gao, C., Li, Z. P., Wang, Q., Wu, X. Y., Zou, S., Su, X., Yeo, R. J., Li, X., Li, W. M., Kong, X. Y., & Shen, W. Z. (2024). Bi-layer in-situ phosphorus doped poly-Si films by PECVD for blistering-free high-efficiency industrial TOPCon solar cells. Solar Energy Materials and Solar Cells, 269, 112771. https://doi.org/10.1016/j.solmat.2024.112771