Citation:
Ng, H. K., Xiang, D., Suwardi, A., Hu, G., Yang, K., Zhao, Y., Liu, T., Cao, Z., Liu, H., Li, S., Cao, J., Zhu, Q., Dong, Z., Tan, C. K. I., Chi, D., Qiu, C.-W., Hippalgaonkar, K., Eda, G., Yang, M., & Wu, J. (2023). Reply to: Mobility overestimation in molybdenum disulfide transistors due to invasive voltage probes. Nature Electronics, 6(11), 839–841. https://doi.org/10.1038/s41928-023-01044-5