Reply to: Mobility overestimation in molybdenum disulfide transistors due to invasive voltage probes

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Reply to: Mobility overestimation in molybdenum disulfide transistors due to invasive voltage probes
Title:
Reply to: Mobility overestimation in molybdenum disulfide transistors due to invasive voltage probes
Journal Title:
Nature Electronics
Publication Date:
22 November 2023
Citation:
Ng, H. K., Xiang, D., Suwardi, A., Hu, G., Yang, K., Zhao, Y., Liu, T., Cao, Z., Liu, H., Li, S., Cao, J., Zhu, Q., Dong, Z., Tan, C. K. I., Chi, D., Qiu, C.-W., Hippalgaonkar, K., Eda, G., Yang, M., & Wu, J. (2023). Reply to: Mobility overestimation in molybdenum disulfide transistors due to invasive voltage probes. Nature Electronics, 6(11), 839–841. https://doi.org/10.1038/s41928-023-01044-5
Abstract:
In this reply, we include new experimental results and verify that the observed non-linearity in rippled-MoS2 (leading to mobility kink) is an intrinsic property of a disordered system, rather than contact effects (invasive probes) or other device issues. Noting that Wu's model is based on a highly ordered ideal system, transfer curves are expected to be linear, and the carrier density is assumed be constant. Wu's model is therefore oversimplified for disordered systems and neglects carrier-density dependent scattering physics. Thus, it is fundamentally incompatible with our rippled-MoS2, and leads to the wrong conclusion.
License type:
Publisher Copyright
Funding Info:
There was no specific funding for the research done
Description:
This version of the article has been accepted for publication, after peer review and is subject to Springer Nature’s AM terms of use, but is not the Version of Record and does not reflect post-acceptance improvements, or any corrections. The Version of Record is available online at: http://dx.doi.org/10.1038/s41928-023-01044-5
ISSN:
2520-1131
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