Design‐Dependent Switching Mechanisms of Schottky‐Barrier‐Modulated Memristors based on 2D Semiconductor

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Design‐Dependent Switching Mechanisms of Schottky‐Barrier‐Modulated Memristors based on 2D Semiconductor
Title:
Design‐Dependent Switching Mechanisms of Schottky‐Barrier‐Modulated Memristors based on 2D Semiconductor
Journal Title:
Advanced Electronic Materials
Publication Date:
17 April 2023
Citation:
Zhou, H., Sorkin, V., Chen, S., Yu, Z., Ang, K., & Zhang, Y. (2023). Design‐Dependent Switching Mechanisms of Schottky‐Barrier‐Modulated Memristors based on 2D Semiconductor. Advanced Electronic Materials. Portico. https://doi.org/10.1002/aelm.202201252
Abstract:
For Schottky barrier-modulated memristors based on 2D semiconductors, it has, to date, not been possible to achieve control over defect type and concentration as the measured switching characteristics vary considerably even under similar fabrication conditions. In this work, four distinct types of memristors are identified based on the combination of low and high resistance sequences, as well as volatile and nonvolatile characteristics. All these four types of memristors were previously observed experimentally by different research labs. It is found that the specific behavior of each memristor type can be explained by the Schottky barrier height modulation and current rectification arising from the concerted effects of the concentration, charge polarity and mobility of defects. The conditions required to realize the four types of 2D semiconductor-based memristors are analyzed and design guidelines for fabricating each of these four types of memristors are provided.
License type:
Attribution-NonCommercial 4.0 International (CC BY-NC 4.0)
Funding Info:
This research / project is supported by the A*STAR - SERC Central Research Fund
Grant Reference no. : N.A

This research / project is supported by the National Research Foundation - Competitive Research Program
Grant Reference no. : NRF-CRP24-2020-0002
Description:
ISSN:
2199-160X
2199-160X
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